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• W2018585296 abstract "The inclusion of momentum conservation and the evaluation of the double Coulomb transition matrix elements render the calculation of the impact ionization scattering rates with first principle approaches computationally expensive and their numerical implementation laborious. Despite the positive assessment of Kane’s random-k approximation, the impact ionization rates and the secondary carrier energies for the III-V semiconductors GaAs, InP, In0.52Al0.48As, and In0.53Ga0.47As have not been provided to the charge transport modeling community in terms of analytical fit functions yet. We provide the impact ionization scattering rates as modified Keldysh formulas and the secondary carrier energies as straight line fits. The band structure computation is based on the empirical pseudopotential method." @default.
• W2018585296 created "2016-06-24" @default.
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• W2018585296 date "2012-04-01" @default.
• W2018585296 modified "2023-09-25" @default.
• W2018585296 title "Impact ionization scattering model based on the random-k approximation for GaAs, InP, InAlAs, and InGaAs" @default.
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• W2018585296 doi "https://doi.org/10.1063/1.3699313" @default.
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