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• W2018625086 endingPage "212" @default.
• W2018625086 startingPage "159" @default.
• W2018625086 abstract "This review paper begins with a brief overview of the most common ferroelectric materials, the perovskites and the Aurivillius families. The epitaxial growth of ferroelectric epitaxial films can be a viable approach to improve the ferroelectric properties, in particular for the layered perovskites. Defects related to a polycrystalline structure, which lead to a degradation of ferroelectric properties like remanent polarisation, piezoelectric coefficient, charge retention, and may cause time-dependent fatigue problems, can be prevented. However, it is also to be considered that effects connected with thin films like substrate clamping, strain or finite thickness may limit the film properties. Substitution of elements allows the adjustment of the film characteristics to the device function. Additionally, the orientation of the films can be controlled by the appropriate choice of the substrate, which is important due to the anisotropy of the ferroelectrics. The deposition methods commonly used for ferroelectric oxide layers are reviewed, particularly with regard to epitaxial growth. The conditions under which stoichiometric, crystalline growth can be obtained are described. The paper primarily focuses on the MO-CVD technique. Furthermore whether epitaxial growth of ferroelectric films occurs or not depends on several conditions like lattice mismatch between film and substrate, surface orientation and crystal symmetry of the substrate, thermal expansion of film and substrate. The influence of these parameters on epitaxial growth is discussed. Local epitaxial growth of ferroelectric layers on metallic electrodes is also mentioned due to its importance in device fabrication. The site-engineering concept is shortly reviewed as the substitution of elements constitutes a simple way to modify film properties in thin film technology." @default.
• W2018625086 created "2016-06-24" @default.
• W2018625086 creator A5030815458 @default.
• W2018625086 creator A5033733939 @default.
• W2018625086 date "2006-09-01" @default.
• W2018625086 modified "2023-10-18" @default.
• W2018625086 title "Epitaxial growth of ferroelectric oxide films" @default.
• W2018625086 cites W135201514 @default.
• W2018625086 cites W1482616151 @default.
• W2018625086 cites W1483456203 @default.
• W2018625086 cites W1486612993 @default.
• W2018625086 cites W1488234906 @default.
• W2018625086 cites W1489893367 @default.
• W2018625086 cites W1489966024 @default.
• W2018625086 cites W1507290449 @default.
• W2018625086 cites W1509858223 @default.
• W2018625086 cites W1516301772 @default.
• W2018625086 cites W1520626444 @default.
• W2018625086 cites W1531263714 @default.
• W2018625086 cites W1534054593 @default.
• W2018625086 cites W1534288330 @default.
• W2018625086 cites W1541990996 @default.
• W2018625086 cites W1570445635 @default.
• W2018625086 cites W1571340051 @default.
• W2018625086 cites W1574894787 @default.
• W2018625086 cites W1620065652 @default.
• W2018625086 cites W1623590285 @default.
• W2018625086 cites W1625643060 @default.
• W2018625086 cites W1627687982 @default.
• W2018625086 cites W1630863022 @default.
• W2018625086 cites W1640549698 @default.
• W2018625086 cites W1647267897 @default.
• W2018625086 cites W1651313539 @default.
• W2018625086 cites W1655296116 @default.
• W2018625086 cites W1665770157 @default.
• W2018625086 cites W1666669976 @default.
• W2018625086 cites W1667823622 @default.
• W2018625086 cites W1671150050 @default.
• W2018625086 cites W1686297715 @default.
• W2018625086 cites W1811303319 @default.
• W2018625086 cites W192720874 @default.
• W2018625086 cites W1963481231 @default.
• W2018625086 cites W1965372429 @default.
• W2018625086 cites W1965421710 @default.
• W2018625086 cites W1965703885 @default.
• W2018625086 cites W1968512619 @default.
• W2018625086 cites W1971576219 @default.
• W2018625086 cites W1972038462 @default.
• W2018625086 cites W1972415625 @default.
• W2018625086 cites W1973518164 @default.
• W2018625086 cites W1974141948 @default.
• W2018625086 cites W1974425296 @default.
• W2018625086 cites W1975080837 @default.
• W2018625086 cites W1975205454 @default.
• W2018625086 cites W1975466870 @default.
• W2018625086 cites W1975640549 @default.
• W2018625086 cites W1975677505 @default.
• W2018625086 cites W1977167073 @default.
• W2018625086 cites W1978086324 @default.
• W2018625086 cites W1978852737 @default.
• W2018625086 cites W1980393209 @default.
• W2018625086 cites W1983540218 @default.
• W2018625086 cites W1983642961 @default.
• W2018625086 cites W1984359327 @default.
• W2018625086 cites W1984885505 @default.
• W2018625086 cites W1985291397 @default.
• W2018625086 cites W1986960991 @default.
• W2018625086 cites W1987161070 @default.
• W2018625086 cites W1987226307 @default.
• W2018625086 cites W1988928734 @default.
• W2018625086 cites W1990428638 @default.
• W2018625086 cites W1990718613 @default.
• W2018625086 cites W1990842790 @default.
• W2018625086 cites W1991267916 @default.
• W2018625086 cites W1991286889 @default.
• W2018625086 cites W1991888029 @default.
• W2018625086 cites W1993254999 @default.
• W2018625086 cites W1993558107 @default.
• W2018625086 cites W1994777382 @default.
• W2018625086 cites W1995844691 @default.
• W2018625086 cites W1997532786 @default.
• W2018625086 cites W1998005825 @default.
• W2018625086 cites W1998032916 @default.
• W2018625086 cites W1998466424 @default.
• W2018625086 cites W2000028167 @default.
• W2018625086 cites W2000687799 @default.
• W2018625086 cites W2001502816 @default.
• W2018625086 cites W2002670349 @default.
• W2018625086 cites W2004550544 @default.
• W2018625086 cites W2005642256 @default.
• W2018625086 cites W2008094813 @default.
• W2018625086 cites W2008207699 @default.
• W2018625086 cites W2008710779 @default.
• W2018625086 cites W2009004480 @default.
• W2018625086 cites W2010325330 @default.
• W2018625086 cites W2011039777 @default.
• W2018625086 cites W2011201876 @default.
• W2018625086 cites W2012164266 @default.

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