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- W2018650062 abstract "In this work, we studied the implantation damage formation into GaAs/AlAs multilayers with different periods. The superlattices (Si) were implanted with 150 keV Ar+ ions at 77 K with fluences in the range (1–10) × 1013 cm−2. The samples were studied with Rutherford backscattering (RBS)/channeling and X-ray diffraction techniques and it was found that, even for the thicker GaAs (68 nm)/AlAs (82 nm) period, the higher fluence (1014 cm−2) were not enough to amorphize the implanted region. Since the same fluence renders pure GaAs amorphous this is a clear evidence for the influence of the multistructure nature of the samples on the damage production. The X-ray results reveal a new peak shifted to lower angles indicating the formation of a region with higher lattice parameters." @default.
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- W2018650062 date "2006-08-01" @default.
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- W2018650062 title "Damage behaviour of GaAs/AlAs multilayer structures" @default.
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