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• W2018728297 abstract "Optical properties of the two-dimensional hole gas (2DHG), formed in modulation-doped Si thin films and SiGe quantum wells grown by molecular beam epitaxy, are studied in detail by photoluminescence (PL) spectroscopy. New PL bands related to the radiative recombination of the 2DHG and nonequilibrium photoexcited electrons are revealed. The properties of these PL bands are shown to be strongly dependent on structure parameters and experimental conditions." @default.
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• W2018728297 date "1995-12-01" @default.
• W2018728297 modified "2023-10-14" @default.
• W2018728297 title "Radiative recombination processes in p-type modulation-doped SiGe quantum wells and Si epilayers" @default.
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• W2018728297 doi "https://doi.org/10.1016/0022-0248(95)00328-2" @default.
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