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• W2018743372 abstract "This paper presents an analytical drain current model considering the impact ionization and parasitic BJT effects, an energy balance equation, and lattice thermal effect for short-channel fully-depleted ultrathin silicon-on-insulator NMOS devices. Supported by the experimental data, the analytical model shows a good prediction of the drain current characteristics. According to the model, in the saturation region at small VG, the impact ionization and parasitic BJT effects are important. At large VG, the lattice thermal effect is important." @default.
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• W2018743372 date "1995-12-01" @default.
• W2018743372 modified "2023-10-12" @default.
• W2018743372 title "An analytical drain current model for short-channel fully-depleted ultrathin silicon-on-insulator NMOS devices" @default.
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• W2018743372 doi "https://doi.org/10.1016/0038-1101(95)00083-6" @default.
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