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• W2018892893 abstract "Abstract The microwave plasma-assisted deposition of reproducible and homogeneously n-type phosphorus-doped polycrystalline (microcrystalline) diamond films on silicon substrates is described. The phosphorus incorporation is obtained by adding gaseous phosphine (PH3) to the gas mixture during growth. The low CH4/H2 ratio (0.15%) and the use of the same growth parameters as for homoepitaxial {111} films, led to a good crystalline quality of the continuous polycrystalline diamond layers, confirmed by SEM images and Raman spectroscopy measurements. Secondary-ion mass spectrometry (SIMS) analysis measured a phosphorus concentration [P] of at least 7 × 1017 cm− 3. Cathodoluminescence spectroscopy in our P-doped polycrystalline films shows a phosphorus bound exciton (BETOP) peak between 5.142 and 5.181 eV. Cathodoluminescence and Raman-effect spectroscopy confirmed the improvement of the crystalline quality of our films as well as a decrease in the intensity of the internal strain when the grain size was decreased. Cathodoluminescence imaging and SIMS depth profile of phosphorus demonstrated a very good homogeneity of phosphorus incorporation in the films." @default.
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• W2018892893 date "2008-07-01" @default.
• W2018892893 modified "2023-10-14" @default.
• W2018892893 title "n-type phosphorus-doped polycrystalline diamond on silicon substrates" @default.
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• W2018892893 doi "https://doi.org/10.1016/j.diamond.2008.01.090" @default.
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