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• W2018897701 abstract "► Fe and N ions were co-implanted into Si wafers using ion implantation technique. ► XAFS characterized the local micro-structure of Fe atoms in the samples. ► The samples with the high doses showed room-temperature ferromagnetism. ► The ferromagnetism originated from the substituted Fe ions embedded in the Si matrix. Fe and N ions were co-implanted into Si wafers using the metal vapor vacuum arc technique and Kaufman technique. Structural analysis showed that Fe ions existed in the matrix at isolated substitution sites in the low dose sample (2.0 × 10 16 cm −2 ), while in the high dose samples of 5.0 × 10 16 cm −2 and 2.0 × 10 17 cm −2 , the non-ferromagnetic FeSi 2 phase formed. The co-implanted samples with the high implanted doses of 5.0 × 10 16 cm −2 and 2.0 × 10 17 cm −2 showed room-temperature ferromagnetism. The saturated magnetization decreased with the increase of the implanted dose. Self-annealing can make for the formation of FeSi 2 phase, which resulted in the observed decrease in the saturated magnetization. The origin of the ferromagnetism was from the substituted Fe ions randomly embedded in the Si matrix." @default.
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• W2018897701 date "2012-02-01" @default.
• W2018897701 modified "2023-09-22" @default.
• W2018897701 title "Structural and magnetic properties of Si semiconductor co-implanted by Fe- and N-ions" @default.
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• W2018897701 doi "https://doi.org/10.1016/j.matchemphys.2011.12.003" @default.
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