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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2018962007> ?p ?o ?g. }

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• W2018962007 abstract "Amorphous silicon films have been prepared by chemical vapor deposition from higher silanes Sin H2n+2 (n≳1) in the temperature range 380–500 °C. The films show electrical properties comparable to those prepared by the plasma discharge of silanes. Gold Schottky devices were fabricated with internal short-circuit currents of 12 mA/cm2 under AM1 illumination over an area of 2.0 cm2." @default.
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• W2018962007 date "1981-09-01" @default.
• W2018962007 modified "2023-09-25" @default.
• W2018962007 title "Preparation of amorphous silicon films by chemical vapor deposition from higher silanes Si<i>n</i>H2<i>n</i>+2(<i>n</i>≳1)" @default.
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• W2018962007 doi "https://doi.org/10.1063/1.92765" @default.
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