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• W2018998745 abstract "Thallic oxide, “T1 2 O 3 ,” has been shown to be a degenerate n ‐type semiconductor with resistivity varying from 60 to 150 μΩ‐cm over the range 4° to 900°K. The carrier concentration was 7 × 10 20 cm −3 and is temperature independent. Room‐temperature Hall mobility was 105 cm 2 V −1 s −1 , increasing to 130 cm 2 V −1 s −1 below 70°K. Donor states were shown to be native defects, probably oxygen vacancies." @default.
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• W2018998745 date "1977-05-01" @default.
• W2018998745 modified "2023-09-24" @default.
• W2018998745 title "Electrical Conduction in Single‐Crystal Thallic Oxide: I, Crystals “As‐Grown” from the Vapor in Air" @default.
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• W2018998745 doi "https://doi.org/10.1111/j.1151-2916.1977.tb14119.x" @default.
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