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- W2019010330 abstract "The effect of sidewall roughness on the bottom etch profile and the etch rate of an SiO2 trench produced in a CF4 plasma were examined using a specially designed apparatus that involved a Faraday cage, which permits the observation of microfeatures on an enlarged scale under practical processing conditions. A microtrench was produced on the bottom of a trench-shaped structure with a low aspect ratio when its sidewalls were smooth because ions reflected from the sidewall enhanced the bottom etch rate near the sidewall. However, the microtrench was not produced in a trench-shaped structure with a high aspect ratio and smooth sidewalls because the effects of ions reflected from two sidewalls were overlapped, nor in step-shaped and trench-shaped structures with rough sidewalls because the contribution of reflected ions to the bottom etch rate was negligible. The overlap in ion reflection effects in a trench having a high aspect ratio and smooth sidewalls was responsible for the inverse reactive ion etching lag phenomenon observed in this study." @default.
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- W2019010330 date "2004-07-01" @default.
- W2019010330 modified "2023-10-16" @default.
- W2019010330 title "Effect of sidewall roughness on the bottom etch properties of an SiO[sub 2] trench produced in a CF[sub 4] plasma" @default.
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- W2019010330 doi "https://doi.org/10.1116/1.1774201" @default.
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