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• W2019017004 abstract "Aluminum and polycrystalline silicon gate metal-oxide-semiconductor (MOS) capacitors were studied in order to investigate the effect of the gate electrode material on the surface state generation and oxide trapping under tunnelling injection of electrons into the oxide. Combined I-V and C-V measurements lead to the conclusion that the main differences between the two types of capacitors are in the surface states generation rate and saturation values and in the bulk trapping sites generation rate. The two types of devices display a remarkable similarity in the behaviour of the occupation probability of bulk oxide traps and in the initial number of trapping sites in fresh samples." @default.
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• W2019017004 date "1988-02-01" @default.
• W2019017004 modified "2023-10-01" @default.
• W2019017004 title "The effect of gate material on oxide degradation due to charge-injection in metal-oxide-semiconductor capacitors" @default.
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• W2019017004 doi "https://doi.org/10.1016/0038-1101(88)90136-0" @default.
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