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- W2019093161 abstract "Experimental results of electrical characterization of InGaN/GaN multiple-quantum-well electroluminescence test structures obtained by thermal admittance spectroscopy are presented. The studied GaN : Mg/5 × (InGaN/GaN)/GaN:Si structures were grown on c-plane sapphire substrate by metal-organic vapor phase epitaxy. Admittance measurements were conducted from room temperature down to 125 K for a wide frequency range and for different applied bias voltages. Analysis of the capacitance versus frequency curves shows the presence of several cutoff frequencies which originate from the response of equivalent RC series circuits and give peaks in the conductance divided by angular frequency. The dependence of the position and the amplitude of these peaks on temperature is discussed." @default.
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- W2019093161 date "2003-01-01" @default.
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- W2019093161 title "Electrical Characterization of InGaN/GaN Multiple-Quantum-Well Structures by Thermal Admittance Spectroscopy" @default.
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