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• W2019135030 abstract "We study the impact of improved dopant activation in a BiCMOS SiGe technology, using laser annealing to improve activation, and a low temperature contact module to avoid de-activation. We present the results of simple DC test structure measurements and high frequency bipolar transistor measurements. Improved activation significantly reduces sheet resistance, particularly for polysilicon layers. Likewise, reductions in the bipolar device resistance parasitics cause an improvement in maximum power gain frequency (fMAX)." @default.
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• W2019135030 date "2013-03-15" @default.
• W2019135030 modified "2023-09-24" @default.
• W2019135030 title "Improved Frequency Response in a SiGe npn Device through Improved Dopant Activation" @default.
• W2019135030 cites W2016522229 @default.
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• W2019135030 doi "https://doi.org/10.1149/05009.0083ecst" @default.
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