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- W2019164570 abstract "Thermal stability of indium tin oxide (ITO)/Ag-based reflective contacts to p-GaN was investigated for their application to vertical structure GaN-based light-emitting diodes (LEDs). The ITO/Ag-based p-contacts showed good ohmic property with low specific contact resistance of . In order to study the thermal degradation of the ITO/Ag-based p-contacts, they were annealed at for in air. The reflectance of ITO/Ag and was significantly reduced due to Ag degradation on annealing. However, the reflectance of and was not degraded on annealing, but instead it was slightly increased to 81.4% and 83.7% at , respectively, because the Ag reflector was protected with or encapsulation layers. Moreover, on annealing of the ITO/Ag-based p-contacts, the vertical structure GaN-based LEDs with thermally stable and p-contacts showed higher output power of and at , respectively, compared to those with thermally unstable ITO/Ag and p-contacts." @default.
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- W2019164570 title "Thermally Stable and Highly Reflective ITO/Ag-Based Ohmic Contacts to p-GaN" @default.
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- W2019164570 doi "https://doi.org/10.1149/1.2778862" @default.
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