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- W2019179940 abstract "Abstract The dimer composition on the Ge-segregated surface of a MBE-grown Si-layer/Ge/Si(001) structure was investigated using surface infrared (IR) spectroscopy on Si substrates with a buried metal layer (BML). The Ge-segregated surface was modified by atomic hydrogen in order to visualize dimer composition by IR spectroscopy. When the Si growth-layer is relatively thin (∼10 ML), almost all Ge atoms are segregated at the surface and form Ge–Ge pure dimers and a small amount of Ge–Si mixed dimers. As the growth-layer thickness increases, the portion of pure Ge–Ge dimers decreases, and finally, the surface is covered with mixed Ge–Si and pure Si–Si dimers at the thickness of 64 ML. This result indicates that mixed dimer formation should be considered as an important factor in the Ge segregation mechanism and Ge incorporation profiles." @default.
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- W2019179940 date "1999-06-01" @default.
- W2019179940 modified "2023-09-27" @default.
- W2019179940 title "Observation of Ge surface segregation during Si-MBE on Ge/Si(001) probed by Si–H/Ge–H surface vibrations" @default.
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- W2019179940 doi "https://doi.org/10.1016/s0039-6028(99)00270-8" @default.
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