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- W2019294422 abstract "The application of high-resolution electron microscopy to the study of different structures and defects in compound semiconductors is illustrated. The study of epilayers and interfacial dislocations is illustrated for GaAs/AlxGa1-xAs and GaSb/InAs superlattices. A new method for preparing well defined grain boundaries in GaAs is reported together with new observations of defects produced by ion implantation and annealing of GaAs/AlxGa1-xAs superlattices is discussed. A brief comparison is made between simulated images for a conventional 125 kV machine and a 400 kV machine with 0.18 nm point-to-point resolution." @default.
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- W2019294422 title "HREM of compound semiconductors" @default.
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