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• W2019311193 abstract "Indium and indium 10% tin oxide films have been produced on room-temperature insulating substrates and have exhibited high conductivities which compare with the best reported for films made at substrate temperatures of 450 °C and higher. They were made by the evaporation and sputtering of the metals in an atmosphere of argon and oxygen onto a substrate which was one electrode of a rf discharge providing surface bombardment of the substrate. The properties of the films were a function of the oxygen partial pressure, the rf bias voltage, the rate of formation, and gas throughput. It was possible to produce films with mobilities up to 40 cm2 V−1 s−1 with carrier densities up to 3×1020 cm−3 and with conductivities up to 5×104 (Ω m)−1, all of which were transparent in the visible region of the spectrum." @default.
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• W2019311193 date "1979-07-15" @default.
• W2019311193 modified "2023-10-18" @default.
• W2019311193 title "Properties of conducting transparent oxide films produced by ion plating onto room-temperature substrates" @default.
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• W2019311193 doi "https://doi.org/10.1063/1.91065" @default.
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