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- W2019358082 abstract "Slurry chemistries utilizing several simple oxy-anions are proposed to meet some of the requirements for low pressure chemical mechanical polishing of Ta barrier and Cu lines in nonalkaline dispersions. Polish rates (PRs) were measured for Cu and Ta disks using based slurries containing anions of phosphate, sulfate, chlorate, carbonate, nitrate, or persulfate. Polishing of Cu, Ta, TaN, and wafers using the sulfate-containing slurry demonstrated a high selectivity of Ta:Cu PRs and could be controlled by varying the anion and/or the pH of the slurry. The processed wafers showed surface morphologies with acceptable roughness and peak-to-valley distances ." @default.
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- W2019358082 date "2010-01-01" @default.
- W2019358082 modified "2023-10-07" @default.
- W2019358082 title "Utility of Oxy-Anions for Selective Low Pressure Polishing of Cu and Ta in Chemical Mechanical Planarization" @default.
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- W2019358082 doi "https://doi.org/10.1149/1.3418616" @default.
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