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- W2019373748 abstract "The conventional method for extracting oxide thickness using accumulation capacitance in a high electric field is not acceptable for ultrathin oxides due to the generation of significant leakage current which degrades the capacitance–voltage (C–V) characteristics. We propose a new extraction method based on approximation of the quantum-mechanical effect. Compared with the conventional Majerjian method which is based on Fermi-Dirac statistics, this new method provides accurate determination of oxide thickness without quantum-mechanical simulation which takes a much longer time for calculation. Although the C–V characteristics were distorted for an ultrathin oxide, we can estimate the exact oxide thickness by using an extrapolation of capacitance values in the low oxide electric field region." @default.
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- W2019373748 date "2002-05-15" @default.
- W2019373748 modified "2023-09-30" @default.
- W2019373748 title "Improved Extrapolation Method of Ultrathin Oxide Thickness Using C-V Characteristics of Metal-Oxide-Semiconductor Device" @default.
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- W2019373748 doi "https://doi.org/10.1143/jjap.41.l549" @default.
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