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• W2019423323 endingPage "8876" @default.
• W2019423323 startingPage "8876" @default.
• W2019423323 abstract "A feature profile evolution model of a trench in SiO 2 is developed in a two-frequency capacitively coupled plasma in CF 4 (5%)/Ar by considering two layers, a mixing layer and an overlaying polymer layer on the basis of a database of etching yield by extending our original physical computer-aided design (CAD) tool, VicAddress (vertically integrated computer-aided design for device processes). That is, the surface exposed to fluorocarbon plasma is considered under competition among the charging of electrons and ions, the deposition of radicals, and reactive etching by ions. The feature profile is also discussed in terms of the bias amplitude and the position on the wafer." @default.
• W2019423323 created "2016-06-24" @default.
• W2019423323 creator A5017652186 @default.
• W2019423323 creator A5050282222 @default.
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• W2019423323 date "2006-11-01" @default.
• W2019423323 modified "2023-09-25" @default.
• W2019423323 title "Modeling of Feature Profile Evolution in SiO₂ as functions of Radial Position and Bias Voltage under Competition among Charging, Deposition, and Etching in Two-Frequency Capacitively Coupled Plasma" @default.
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• W2019423323 doi "https://doi.org/10.1143/jjap.45.8876" @default.
• W2019423323 hasPublicationYear "2006" @default.
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