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- W2019517532 abstract "Results are given from the investigation on the SiSc–C system, which is of interest with respect to the growth of α-SiC single crystals. Data on the crystallization rate in the 1500 to 1900 °C temperature range are given. The optimal solvent compositions for growing a perfect SiC layer are determined. A possible mechanism for the formation and transport of SiC in the liquid phase is proposed. Es werden die Ergebnisse einer Untersuchung am SiScC-System mitgeteilt, das bezüglich des Wachstums von α-SiC-Einkristallen von Interesse ist. Werte der Kristallisationsgeschwindigkeit im Temperaturbereich von 1500 bis 1900 °C werden angegeben. Die optimalen Lösungsbedingungen für das Wachstum von perfekten SiC-Schichten werden bestimmt. Ein möglicher Mechanismus für die Bildung und den Transport von SiC in der flüssigen Phase wird vorgeschlagen." @default.
- W2019517532 created "2016-06-24" @default.
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- W2019517532 date "1975-11-16" @default.
- W2019517532 modified "2023-09-25" @default.
- W2019517532 title "Study of the silicon carbide preparation in the silicon–scandium–carbon system" @default.
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- W2019517532 doi "https://doi.org/10.1002/pssa.2210320134" @default.
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