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- W2019620128 abstract "Strained, coherent InAs islands were grown on GaAs (100) planar substrates by molecular-beam epitaxy (MBE). These coherent islands were buried under GaAs cap layers grown by MBE and migration enhanced epitaxy at low temperature (∼ 400 °C), the latter case exhibiting an order of magnitude stronger photoluminescence (PL). The PL and PL excitation spectra reveal the discrete nature of the density of states of three-dimensionally confined electronic states in the islands. The possibility of placing InAs on a regular array of prepatterned square mesas, size-reduced via buffer layer growth to a ≤150 nm mesa top, was explored. The InAs on mesas with sub-100 nm lateral dimensions is found to have an enhanced critical thickness for two-dimensional to three-dimensional island morphology transition, going from ∼1.8 monolayers (ML) for growth on planar substrate to ≥5 ML for 70 nm mesas. Spectrally and spatially resolved cathodoluminescence studies show these InAs volumes to be optically active." @default.
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- W2019620128 date "1995-03-01" @default.
- W2019620128 modified "2023-09-23" @default.
- W2019620128 title "Structural and optical behavior of strained InAs quantum boxes grown on planar and patterned GaAs (100) substrates by molecular-beam epitaxy" @default.
- W2019620128 doi "https://doi.org/10.1116/1.587930" @default.
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