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- W2019692259 abstract "Abstract The liquid phase epitaxy (LPE) growth of InGaAsP on GaAs in the immiscible region has been studied in terms of the substrate induced stabilization. The results show that layers grown on (100) GaAs exhibit extraordinary behavior in the PL spectra as well as the surface morphology, while those on (111)A and (111)B GaAs do not. This suggests that the stabilization due to the substrate for the (111) orientation is stronger than that for (100), which is consistent with the theoretical prediction that the effect of strain energy induced by the substrate is greater for the growth on (111) than (100) oriented substrates. It is suggested, by examining the compositional variation at the onset of the LPE growth, that the effect which weakens the substrate induced stabilization for the (100) orientation is the presence of defects due to the lattice mismatch between the substrate and the transient layer, that grows within the initial short time of about 50 ms." @default.
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- W2019692259 date "1988-03-01" @default.
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- W2019692259 title "Effect of lattice mismatch between epitaxial layer and substrate on immiscibility of InGaAsP/GaAs LPE layers" @default.
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- W2019692259 doi "https://doi.org/10.1016/0022-0248(88)90092-9" @default.
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