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- W2019720152 abstract "The conduction of reactor fast neutron-compensated n-Ge (ND ≈ 1015 to 1019 cm−3) is studied. The formation of the disordered regions (DR's) is shown to generate an electrostatic potential which modulates the energy bands and affects strongly most of the electronic properties of a semiconductor. The DR-compensated germanium is shown to possess most of the properties of the amorphous semiconductors. The Ohmic conductivity at low temperature (77 to 4.2 K) and the conductivity at moderate and strong electric fields at 77 K reveal a hopping nature. Die Leitfähigkeit von mit schnellen Reaktorneutronen kompensierten n-Ge (ND = 1015 bis 1019 cm−3) wird untersucht. Es wird gezeigt, daß die Bildung von fehlgeordneten Bereichen (DR's) ein elektrostatisches Potential erzeugt, das die Energiebänder moduliert und die meisten elektronischen Eigenschaften eines Halbleiters stark beeinflußt. Es wird weiter gezeigt, daß das DR-kompensierte Germanium fast alle Eigenschaften des amorphen Halbleiters besitzt. Die ohmsche Leitfähigkeit bei tiefen Temperaturen (77 bis 4,2 K) und die Leitfähigkeit bei mittleren und starken elektrischen Feldern bei 77 K zeigen Hoppingverhalten." @default.
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- W2019720152 date "1984-03-01" @default.
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- W2019720152 title "Electrophysical Properties of Disordered Systems Based on Crystalline Germanium Compensated by Fast Neutron Irradiation" @default.
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- W2019720152 doi "https://doi.org/10.1002/pssb.2221220141" @default.
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