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- W2019757896 abstract "In the past decade, significant effort has been made in the research community to search for alternative high mobility channel materials as replacement for silicon which has been the dominant channel material in complementary metal-oxide-semiconductor (CMOS) technology for almost 50 years. Among possible candidates, Germanium-tin (GeSn) has high hole mobility and is a promising channel material for scaling the supply voltage towards 0.5 V for high-performance p-channel field-effect transistors (pFETs) in the sub-10 nm technology nodes. In this paper, we discuss the research and development of using GeSn as the channel material of pFETs for enhancing the hole mobility and drive current. This includes GeSn planar pFETs, GeSn nanowire (NW) pFETs, as well as GeSn tunneling FETs (TFETs). Low-temperature Si 2 H 6 passivation was developed to realize high-quality gate stack on GeSn." @default.
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- W2019757896 date "2014-08-12" @default.
- W2019757896 modified "2023-09-28" @default.
- W2019757896 title "(Invited) Germanium-Tin P-Channel Field-Effect Transistor with Low-Temperature Si<sub>2</sub>H<sub>6</sub> Passivation" @default.
- W2019757896 doi "https://doi.org/10.1149/06406.0851ecst" @default.
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