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• W2019871234 abstract "summary, the commercial promise for e-beam-pumped semiconductor laser projectors technology is truly enormous.There are, however, some major technical issues to be resolved before the promise can be realized in practical RGP laserprojector systems. We believe the R/D investment required to overcome these issues is a good one. 6. ISSUES FOR PRODUCTIONIZATIONWhile the e-beam-pumped semiconductor laser projector potentially provides breakthrough performance, several issuesmust be resolved before an acceptable product can be designed and produced. The range of dual use applications which we areconsidering present a wide variation in tolerance to cost, reliability and performance issues. The Russian prototypesdescribed above are actually proof-of-concept demonstrators, and will require fairly extensive development, engineering, andproduct improvement in order to address application markets in the West. The promise is, however, enormous if theseproblems can be resolved successfully.The processes for growing Il-VI crystals and processing laser screens are quite equipment and labor intensive at thepresent. Large scale crystal growth and automated screen processing are feasible in principle, but a significant investment infacilities, equipment, and process development will be required. It appears that, leveraging off the present vigorous RID invisible semiconductor injection laser and LED's, epitaxial growth of monolithic screens on sapphire or other substrates maybecome technologically feasible in the near future7. In particular, work on vertical cavity semiconductor lasers (VCSEL's) forthe visible offers the greatest benefit. The active gain region consists of quantum wells designed for a specific wavelengthseparated by one-half of that wavelength in a higher bandgap alloy, that is, the resonant periodic gain (RPG) medium8. Itmay even prove possible to prepare advanced monolithic three color laser screens by advanced epitaxial growth technology.The impact of such technology innovation should be a reduction in manufacturing cost for e-beam-pumped semiconductorlaser projector tubes of 1-2 orders of magnitude.The requirement for high anode voltage is a serious drawback at present. The crystal thickness must be comparable to thee-beam penetration depth, which depends strongly on the electron energy such that anode potentials in the range of 50-75 kVare required. These are higher than the voltages used with conventional CRT projectors, and hence, expensive electronics arepresently required. However, good high voltage engineering and manufacturing practices can reduce the cost and enhance thereliability of the electronics. Another problem encountered is the production of x-rays, which must be adequately shielded bydesigns certifiable for turn-key system operation. Looking to advanced monolithic screen technology, since the thickness ofsuch a screen will be only 2-4 .tm rather than the 10-20 j.tm required by bulk crystal designs, the c-beam voltage can bereduced to 15-25 kV. This will permit the use of conventional TV electronics and will virtually eliminate any need for x-rayshielding." @default.
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• W2019871234 date "1995-03-03" @default.
• W2019871234 modified "2023-09-23" @default.
• W2019871234 title "<title>Dual-use applications for e-beam-pumped semiconductor lasers</title>" @default.
• W2019871234 doi "https://doi.org/10.1117/12.205012" @default.
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