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• W2019886925 abstract "Ohmic contact formation mechanism of Ni on n-type 4H–SiC is proposed by comparing the electrical properties with microstructural change. The ohmic behavior was observed at temperatures higher than 900 °C, but Ni2Si phase, as formerly reported to be responsible for ohmic contact, was formed after annealing at 600 °C. The higher work function of Ni2Si than Ni and the observation of graphite phase on the surface of Ni silicide after annealing at 950 °C support that a number of carbon vacancies were produced below the contact, playing a key role in forming an ohmic contact through the reduction of effective Schottky barrier height for the transport of electrons." @default.
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• W2019886925 date "2001-09-17" @default.
• W2019886925 modified "2023-10-02" @default.
• W2019886925 title "Ohmic contact formation mechanism of Ni on n-type 4H–SiC" @default.
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• W2019886925 doi "https://doi.org/10.1063/1.1404998" @default.
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