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• W2019910167 abstract "We investigated the effect of the high-k TiOx (k∼40) gate dielectric on the mobility (μFE) of indium-gallium-zinc oxide (IGZO) transistors. As the thickness of the TiOx layer at the interface of the IGZO channel and SiNx gate dielectric layer increased from 2 to 8 nm, the μFE value was monotonously reduced from 9.9 to 1.8 cm2/V s. The degradation of the mobility was attributed to the Coulomb scattering mechanism rather than the phonon scattering mechanism of the high-k TiOx layer based on the behavior of the temperature-dependent mobilities for all of the IGZO transistors." @default.
• W2019910167 created "2016-06-24" @default.
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• W2019910167 date "2009-01-26" @default.
• W2019910167 modified "2023-10-17" @default.
• W2019910167 title "Impact of high-k TiOx dielectric on device performance of indium-gallium-zinc oxide transistors" @default.
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• W2019910167 doi "https://doi.org/10.1063/1.3075612" @default.
• W2019910167 hasPublicationYear "2009" @default.
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