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- W2019912636 abstract "In this paper we review the subject of oxide breakdown (BD), focusing our attention on the case of the gate dielectrics of interest for current Si microelectronics, i.e., Si oxides or oxynitrides of thickness ranging from some tens of nanometers down to about 1nm. The first part of the paper is devoted to a concise description of the subject concerning the kinetics of oxide degradation under high-voltage stress and the statistics of the time to BD. It is shown that, according to the present understanding, the BD event is due to a buildup in the oxide bulk of defects produced by the stress at high voltage. Defect concentration increases up to a critical value corresponding to the onset of one percolation path joining the gate and substrate across the oxide. This triggers the BD, which is therefore believed to be an intrinsic effect, not due to preexisting, extrinsic defects or processing errors. We next focus our attention on experimental studies concerning the kinetics of the final event of BD, during whi..." @default.
- W2019912636 created "2016-06-24" @default.
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- W2019912636 creator A5088810600 @default.
- W2019912636 date "2005-12-15" @default.
- W2019912636 modified "2023-10-14" @default.
- W2019912636 title "Dielectric breakdown mechanisms in gate oxides" @default.
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