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- W2019916149 abstract "Abstract Resistance, magnetoresistance and Hall effect were studied in sputtered cobalt films of varying thickness, deposited on silicon substrates, in the temperature range of 5–350 K and magnetic field up to 7 T. Contributions from both metallic cobalt and silicide layers are revealed. The latter undergo a metal–insulator transition in the temperature range of 260–280 K." @default.
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- W2019916149 date "2001-05-01" @default.
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- W2019916149 title "Transport and magnetotransport properties of Co thin films on Si" @default.
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