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- W2019917172 abstract "Abstract The conventional piezoresistive strain sensor uses either the longitudinal or transverse piezoresistive effect. However, in addition to the change in resistance, an electric field is developed perpendicular to the current flow. This yields a voltage output, similar to that found in Hall measurements, which is proportional to strain instead of magnetic field. The magnitude of this voltage is also determined by the angle of the applied strain. This paper examines the use of this effect in producing a compact pressure sensor in polysilicon films. A theoretical model is described for both the change in resistance and the perpendicular voltage, due to a shear strain, for a polysilicon device and a comparison with experimental results shows reasonable agreement." @default.
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- W2019917172 date "1988-11-01" @default.
- W2019917172 modified "2023-10-16" @default.
- W2019917172 title "Polysilicon strain sensors using shear piezoresistance" @default.
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- W2019917172 doi "https://doi.org/10.1016/0250-6874(88)87015-x" @default.
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