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• W2019917866 abstract "Conventional super-junction lateral double diffused MOSFET (SJ-LDMOS) fabricated on Silicon on Insulator (SOI) substrate suffers from low breakdown voltage under the same on-resistance due to substrate-assisted depletion effect. To suppress this effect, it is important to find the charge density in the inversion layer under buried oxide. In this paper, we propose a charge density equation and its formulation. The results were used in a 3D device simulator to optimize the device structure. The experimental results confirm that the equation is useful to optimize device performance. The breakdown voltage of structure increased 54% and on-state-resistance decreased 58% compared to conventional SJ device. The device fabrication procedure is fully compatible with mainstream SOI CMOS process." @default.
• W2019917866 created "2016-06-24" @default.
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• W2019917866 date "2013-07-01" @default.
• W2019917866 modified "2023-09-24" @default.
• W2019917866 title "Suppress of Substrate-Assisted Depletion Effects in Super Junction LDMOS on Thin Film SOI" @default.
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• W2019917866 doi "https://doi.org/10.4028/www.scientific.net/amr.721.521" @default.
• W2019917866 hasPublicationYear "2013" @default.
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