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- W2019925911 abstract "Abstract Tridoping (Al–As–N) into ZnO has been proposed to realize low resistive and stable p -ZnO thin film for the fabrication of ZnO homojunction by RF magnetron sputtering. The tridoped films have been grown by sputtering the AlN mixed ZnO ceramic targets (0, 0.5, 1 and 2 mol%) on GaAs substrate at 450 °C. Here, Al and N from the target, and As from the GaAs substrate (back diffusion) takes part into tridoping. The grown films have been characterized by Hall measurement, X-ray diffraction, photoluminescence, time-of-flight secondary ion mass spectroscopy and X-ray photoelectron spectroscopy. It has been found that all the films showed p -conductivity except for 2 mol% AlN doped film. The obtained resistivity (8.6×10 −2 Ω cm) and hole concentration (4.7×10 20 cm −3 ) for the best tridoped film (1 mol% AlN) is much better than that of monodoped and codoped ZnO films. It has been predicted that [(As Zn − 2V Zn )+N O ] acceptor complex is responsible for the p -conduction. The homojunction fabricated using the best tridoped ZnO film showed typical rectifying characteristics of a diode. The junction parameters have been determined for the fabricated homojunction by Norde's and Cheung's method." @default.
- W2019925911 created "2016-06-24" @default.
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- W2019925911 date "2012-12-01" @default.
- W2019925911 modified "2023-09-27" @default.
- W2019925911 title "Fabrication of tridoped p-ZnO thin film and homojunction by RF magnetron sputtering" @default.
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- W2019925911 doi "https://doi.org/10.1016/j.ceramint.2012.04.075" @default.
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