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- W2019929490 abstract "Abstract The synergistic effects of NH 3 ambient and ultraviolet illumination on the dielectric properties of hafnia based gate dielectrics are reported in this paper. The films were processed at relatively low temperatures (∼400 °C) by pulsed laser ablation and UV oxidation technique. UV illumination and the NH 3 ambient created a thin and a denser interfacial layer (at the film–Si interface) comprised of Hf Si O N bonding. As a result of the interfacial layer modification, a leakage current density lower than 10 −4 A/cm 2 and a dielectric constant of ∼21.7 were extracted from the best samples processed in NH 3 and under UV illumination. The nitrogen doped HfO 2 also exhibited a thinner interfacial layer (∼12 A) in comparison to the films processed without NH 3 ambient." @default.
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- W2019929490 date "2007-05-01" @default.
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- W2019929490 title "UV assisted oxidation and nitridation of hafnia based thin films for alternate gate dielectric applications" @default.
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- W2019929490 doi "https://doi.org/10.1016/j.apsusc.2007.01.027" @default.
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