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• W2019936612 abstract "The O-mediated Cu-film growth on O-precovered Ru(0 0 0 1) is investigated by means of scanning tunneling microscopy for growth temperatures between 300 and 600 K. Cu-films on clean Ru(0 0 0 1) grow in a multilayer mode. For O precoverages (Θ) between 0.2 ML (monolayer) and the saturation coverage (Θ=0.5ML), a layer-by-layer growth is observed at growth temperatures between 350 and 450 K. On Cu-islands, an O/Cu surfactant layer is formed, which floats on-top of the growing film and induces the layerwise Cu-film growth. The surface coverage of the O/Cu surfactant layer linearly rises with the O precoverage up to Θ≈0.4ML, where it completely covers the surface. Two different types of the surfactant layer are identified, inducing different surfactant mechanisms. For Θ=0.1–0.4ML, the O/Cu surfactant structure (A-type) displays some local order and induces inhomogeneous nucleation at the misfit-induced relaxation structure of the Cu-film. The layer-wise growth is explained by the concept of two mobilities, implying a large attempt frequency for adatom jumps over the interlayer diffusion barrier at the steps. For Θ = 0.4–0.5 ML, a disordered O/Cu surfactant layer is established (B-type), inducing homogeneous nucleation. The layer-wise Cu-film growth is attributed to a reduction of the effective interlayer diffusion barrier. Cu-film growth at 400 K on the ordered (3×2√3)O/Cu structure formed at temperatures around 520 K yields the conclusion that the O/Cu surfactant structures are composed of randomly arranged O–Cu–O strings and disrupted “Cu2O(1 1 1)” fragments." @default.
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• W2019936612 date "2001-08-01" @default.
• W2019936612 modified "2023-09-28" @default.
• W2019936612 title "Effects and structures of the O/Cu surfactant layer in O-mediated film growth of Cu on Ru(0 0 0 1)" @default.
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• W2019936612 doi "https://doi.org/10.1016/s0079-6816(01)00023-5" @default.
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