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• W2019936836 abstract "Sulfur passivation of Ge(100) is achieved using aqueous ammonium sulfide (NH4)2S(aq). The passivation layer is largely preserved after atomic layer deposition of the high-κ dielectric material HfO2 when sufficiently low growth temperatures (e.g., 220°C) are employed. Oxygen incorporation is moderate and results in an electrically passivating GeOS interface layer. The HfO2∕GeOS∕Ge gate stack exhibits lower fixed charge and interface state density than a more conventional HfO2∕GeON∕Ge gate stack fabricated via an ammonia gas treatment." @default.
• W2019936836 created "2016-06-24" @default.
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• W2019936836 date "2006-09-11" @default.
• W2019936836 modified "2023-10-18" @default.
• W2019936836 title "Hafnium oxide gate dielectrics on sulfur-passivated germanium" @default.
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• W2019936836 doi "https://doi.org/10.1063/1.2338751" @default.
• W2019936836 hasPublicationYear "2006" @default.
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