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- W2019946453 abstract "This work is the first which clearly demonstrates, by deep-level transient spectroscopy analysis in a Schottky structure, the presence of excimer laser-related defects in both n- and p-type virgin monocrystalline silicon. The detected point defects are correlated to those observed after solid-state laser (ruby, YAG) annealing in silicon. The main part of these traps could be attributed to the melt-related defects produced by the fast quenching rate in pulsed laser treatment." @default.
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- W2019946453 title "Electrically active defects in silicon after excimer laser processing" @default.
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- W2019946453 doi "https://doi.org/10.1063/1.344021" @default.
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