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- W2019949207 abstract "The net positive charge density and the interface state density of MNOS structures on p‐Si (100) with APCVD and plasma silicon nitride is studied as a function of the nitride deposition temperature and the postdeposition annealing temperature. For APCVD silicon nitride, a decrease of is accompanied by an increase of with increasing deposition and annealing temperature. Electron irradiation (30 keV and dosage) did not affect , whereas was increased for nitride films deposited below 800°C. For plasma silicon nitride, both and decreased with deposition and annealing temperature up to 450°C. Very low interface state densities could be achieved. These low values are due to the influence of hydrogen incorporated in the PECVD silicon nitride films. Very high positive charge densities (>1013 cm−2) could be obtained by cesium contamination of the plasma nitride films." @default.
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- W2019949207 date "1984-07-01" @default.
- W2019949207 modified "2023-09-26" @default.
- W2019949207 title "Interface States and Fixed Charges in MNOS Structures with APCVD and Plasma Silicon Nitride" @default.
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