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• W2019949479 abstract "Heterostructured Mn3GaN0.5/GaN nanowires have been synthesized by a catalytic chemical vapor deposition method. Mn3GaN0.5/GaN nanowires exhibit ferromagnetic properties with a Curie temperature above room temperature. It was observed that the acceptor Mn2+/Mn3+ (Mn 3d) levels superpose on the GaN energy levels, shifting the energy of 5.8 eV toward Fermi energy. Compared with GaN nanowires, the D0X line of Mn3GaN0.5/GaN at 397.8 nm (3.117 eV) indicated the 33.4 nm red-shift due to hole-doping in the PL spectra. The synthesized Mn3GaN0.5/GaN nanowires had the relatively high yellow band emission of about 596.5 nm, due to the internal 4T1→ 6A1 transition of Mn2+ (3d5), which is permitted by selection rules. The sharp peak at 675.6 nm in Mn3GaN0.5/GaN nanowire PL spectra might correspond to the transition 4T2 → defect state." @default.
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• W2019949479 date "2005-10-08" @default.
• W2019949479 modified "2023-10-09" @default.
• W2019949479 title "Synthesis and Characterization of Heterostructured Mn₃GaN_0.5/GaN Nanowires" @default.
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• W2019949479 doi "https://doi.org/10.1021/cm050557j" @default.
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