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- W2019995184 abstract "We present in this paper Raman scattering measurements on a series of strained layer (InxGa1−xAs) (AlAs) multiple quantum wells (MQWs) in which the modest (x=0.04) indium concentration in the wells gives rise to a 0.3% strain between the alloy layers and the GaAs substrate. Comparison of the measured confined longitudinal optic (LO) mode frequencies with our model yields an effective interface broadening parameter W=1.2 in these samples. Results on a set of unstrained (GaAs) (AlAs) samples gives a similar interface width indicating that in these samples the incorporation of strain in the growth does not adversely effect the quality of the interfaces between the constituent superlattice materials." @default.
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- W2019995184 date "1992-01-01" @default.
- W2019995184 modified "2023-09-26" @default.
- W2019995184 title "Raman scattering measurements on InGaAs/AlAs strained MQWs" @default.
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- W2019995184 doi "https://doi.org/10.1016/0749-6036(92)90197-d" @default.
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