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• W2019995455 abstract "High mobility channel materials and new device structures will be needed to meet the power and performance specifications in future technology nodes. In these new material systems and devices various electrically active defects are present at or close to the interface between the high-k dielectric and the alternative channel material which are a major concern for both the performance and the reliability of these new devices." @default.
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• W2019995455 date "2012-04-01" @default.
• W2019995455 modified "2023-10-01" @default.
• W2019995455 title "Challenges for introducing Ge and III/V devices into CMOS technologies" @default.
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• W2019995455 doi "https://doi.org/10.1109/irps.2012.6241852" @default.
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