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- W201999560 abstract "Epitaxial layers are grown on semi-insulating LEC GaAs substrates by the chloride CVD technique and depletion type MESFETs with a gate length of 0.5μm have been fabricated on these epitaxial layers. Correlation between the DC/RF device characteristics and the substrate quality has been studied. It has been found that the density of the precipitate-like microscopic defects in the substrate revealed by AB solution etching(AB-EPD) have a large effect on the device characteristics and its uniformity. FETs fabricated on high AB-EPD substrates have shown worse device characteristics compared with FETs fabricated on the low AB-EPD substrates in spite of nearly the same dislocation density. The origin of the microscopic defects is examined by TEM/EDX." @default.
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- W201999560 date "1990-01-01" @default.
- W201999560 modified "2023-10-05" @default.
- W201999560 title "MICROSCOPIC DEFECTS IN SEMI-INSULATING GaAs AND THEIR EFFECT ON THE FET DEVICE CHARACTERISTICS" @default.
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- W201999560 doi "https://doi.org/10.1016/b978-0-444-88429-9.50053-7" @default.
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