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• W2019999611 abstract "The multiple-gate field-effect transistor (MuGFET) is a device with a gate folded on different sides of the channel region. They are one of the most promising technological solutions to create high-performance ultra-scaled SOI CMOS. In this work, the behavior of the threshold voltage in double-gate, triple-gate and quadruple-gate SOI transistors with different channel doping concentrations is studied through three-dimensional numerical simulation. The results indicated that for double-gate transistors, one or two threshold voltages can be observed, depending on the channel doping concentration. However, in triple-gate and quadruple-gate it is possible to observe up to four threshold voltages due to the corner effect and the different doping concentration between the top and bottom of the Fin." @default.
• W2019999611 created "2016-06-24" @default.
• W2019999611 creator A5051385065 @default.
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• W2019999611 date "2008-12-01" @default.
• W2019999611 modified "2023-10-04" @default.
• W2019999611 title "Threshold voltages of SOI MuGFETs" @default.
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• W2019999611 doi "https://doi.org/10.1016/j.sse.2008.06.046" @default.
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