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- W2020009270 abstract "We have developed a low temperature procedure for molecular beam epitaxy of CdTe buffer layers on {211} Si wafers and have used Si/ZnTe/CdTe composite substrates for molecular beam epitaxy of double layer Hg1−xCdxTe heterostructures. Planar p-on-n double layer heterostructures were formed by an implantation technique and test diodes were fabricated and characterized. At 77 K, devices with 30×30 μm2 junction area had R0A values in the range 1.5×106–1×107Ω cm2 with a uniform cut-off wavelength of 4.65 μm." @default.
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- W2020009270 date "1997-03-31" @default.
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- W2020009270 title "Planar p-on-n HgCdTe heterostructure infrared photodiodes on Si substrates by molecular beam epitaxy" @default.
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