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- W2020023096 abstract "Temperature-dependent photoluminescence (PL) measurements on In-doped CdTe epitaxial films grown on p-CdTe (211) substrates by molecular beam epitaxy have been performed in order to investigate the behavior of the shallow donor-band recombination (D, h) peak. The temperature dependence of the PL intensity of the peak at 1.590 eV observed at 12 K shows that it is related to shallow donor-band recombination. The inhomogeneous broadening of the full width at half maximum for the (D, h) peak might be related to the change from correlated electron and hole distributions in the low-temperature region below 20 K to random electron and hole distribution in the relatively high-temperature region above 40 K. These results indicate that the PL intensity and the linewidth of the (D, h) peak in In-doped CdTe films are strongly related to the distribution behavior of the electrons and the holes." @default.
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- W2020023096 date "1999-04-01" @default.
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- W2020023096 title "The behavior of the shallow donor-band recombination in In-doped CdTe epitaxial films grown on p-CdTe (211) substrates" @default.
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- W2020023096 doi "https://doi.org/10.1016/s0038-1098(99)00099-x" @default.
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