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- W2020032317 abstract "We present an X-ray photoelectron spectroscopy (XPS) study of the interfacial chemical reactions during the total reduction of a 5 Å thick GaAs native oxide layer accomplished in two separate stages. First, the As 2 O 3 has been selectively reduced by annealing the oxidized surface at increasing temperatures. In the second stage, the reduction of the Ga oxides has been completed at room temperature by Si deposition. The total amount of O at the GaAs interface remains constant during both processes. During the As 2 O 3 thermal reduction, the analysis of the Ga 2 p 3 2 and Ga LMM spectra shows that, depending on the annealing temperature, GaO x (x < 3 2 ) or Ga 2 O 3 growth occurs. The Si promoted of the Ga oxides results in the formation of Si oxides of different stoichiometry at the GaAs surface." @default.
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- W2020032317 date "1992-05-01" @default.
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- W2020032317 title "The chemistry of O in reduction processes of the GaAs native oxides" @default.
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- W2020032317 doi "https://doi.org/10.1016/0039-6028(92)91372-i" @default.
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