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• W2020040180 abstract "We report on solution-processible high permittivity nanocomposite gate insulators based on BaTiO3 nanoparticles, surface-modified with a phosphonic acid, in poly(4-vinylphenol) for organic field-effect transistors. The use of surface-modified BaTiO3 nanoparticles affords high quality nanocomposite thin films at large nanoparticle volume fractions (up to 37vol%) with a large capacitance density and a low leakage current (10−8A∕cm2). The fabricated pentacene field-effect transistors using these nanocomposites show a large on/off current ratio (Ion∕off 104–106) due to the high capacitance density and small leakage current of the gate insulator." @default.
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• W2020040180 date "2008-07-07" @default.
• W2020040180 modified "2023-10-12" @default.
• W2020040180 title "Solution-processible high-permittivity nanocomposite gate insulators for organic field-effect transistors" @default.
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• W2020040180 doi "https://doi.org/10.1063/1.2949320" @default.
• W2020040180 hasPublicationYear "2008" @default.
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