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- W2020077216 abstract "In this paper, we report the changes of electrical, structural and optical characteristics in <TEX>$Ge_2Sb_2Te_5$</TEX> thin films according to an increase of Si content. The Si-doped <TEX>$Ge_2Sb_2Te_5$</TEX> thin films were prepared by rf-magnetron co-sputtering method. Isothermal annealing was carried out at <TEX>$N_2$</TEX> atmosphere. The crystallization speed (v) of amorphous thin films was evaluated by detecting the reflection response signals using a nano-pulse scanner (wavelength = 658 nm) with illumination power of 1~17 mW and pulse duration of 10~460 ns. Structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of 300~3000 nm using UV-vis-NIR spectrophotometer. The sheet resistance (RS) of the thin films was measured using 4 point probe. Conclusivlely, the v-value decreased with an increase of Si content, while the RS-values of both crystalline and amorphous phases were increased. In particular, fcc-to-hexagonal transition was suppressed by the added Si atoms." @default.
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- W2020077216 date "2010-04-01" @default.
- W2020077216 modified "2023-10-01" @default.
- W2020077216 title "A Study on the Phase Change Characteristics of Si-doped Ge2Sb2Te5Thin Films for PRAM" @default.
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- W2020077216 doi "https://doi.org/10.4313/jkem.2010.23.4.261" @default.
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