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- W2020077532 abstract "Strain-free GaAs epitaxial layers on Si can be achieved by introducing a CaF2 buffer layer. Here, molecular beam epitaxial growth of GaAs on CaF2/Si(111) substrates has been thoroughly investigated. Three growth regimes have been distinguished. In the low temperature regime, growth was always in a three-dimensional mode, while, in the high temperature regime, two-dimensional nucleation was achieved. However, continued growth in the high temperature regime resulted in the formation of twins after epitaxial initiation. Between those two regimes, there is a narrow temperature window in which high quality GaAs can be grown on the top of CaF2/Si(111). Under optimal growth conditions in this window, 1 μm thick GaAs layers were grown which exhibited good crystal quality (a minimum ion channeling yield of 3.5% was achieved at the GaAs surface) along with specular surface morphology. Such high quality GaAs on the top of CaF2/Si(111) substrates was achieved previously only by using electron-beam modification of the CaF2 surface." @default.
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- W2020077532 date "1994-01-01" @default.
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- W2020077532 title "Optimization of GaAs epitaxy on CaF2/Si(111) substrates" @default.
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- W2020077532 doi "https://doi.org/10.1016/0022-0248(94)90728-5" @default.
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