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• W2020108695 endingPage "1204" @default.
• W2020108695 startingPage "1195" @default.
• W2020108695 abstract "The sheet resistance and structural properties of high-fluence Si-implanted diamond were investigated. In order to minimize the radiation damage and to facilitate SiC formation the implantation was performed at 900 °C. All samples were subsequently annealed in a rf-heated furnace at 1500 °C for 10 min in order to remove defects and thermally unstable phases. X-ray diffraction, infrared absorption spectrometry, and high-resolution cross-sectional transmission electron microscopy revealed the formation of a buried layer inside the implanted diamond, which contains SiC nanocrystallites. These SiC nanocrystals have a cubic structure and are nearly perfectly aligned with the diamond lattice. Raman spectroscopy was applied to analyze radiation-damage-induced graphitization in dependence on the implantation conditions. The sheet resistance of the samples was measured as function of temperature by four point probe technique in van-der-Pauw geometry. The decrease of the sheet resistance with increasing ion fluence unambiguously shows the influence of implantation-induced damage. The behavior of the sheet resistance can strongly be modified by additional nitrogen implantation. The resulting higher conductivity is interpreted as partial incorporation of the nitrogen donor into the SiC nanocrystals. However, when the Si fluence exceeds a critical value of 5.3×1017 Si+ cm−2 at 900 °C the diamond is irreversibly damaged and defect related conductivity dominates." @default.
• W2020108695 created "2016-06-24" @default.
• W2020108695 creator A5000609968 @default.
• W2020108695 creator A5036356118 @default.
• W2020108695 creator A5045141816 @default.
• W2020108695 creator A5060298088 @default.
• W2020108695 creator A5061659102 @default.
• W2020108695 creator A5070659547 @default.
• W2020108695 date "2003-06-26" @default.
• W2020108695 modified "2023-10-06" @default.
• W2020108695 title "High-fluence Si-implanted diamond: Formation of SiC nanocrystals and sheet resistance" @default.
• W2020108695 cites W1651000842 @default.
• W2020108695 cites W1965692883 @default.
• W2020108695 cites W1972070975 @default.
• W2020108695 cites W1975523891 @default.
• W2020108695 cites W1986082562 @default.
• W2020108695 cites W1990757757 @default.
• W2020108695 cites W1991310141 @default.
• W2020108695 cites W1991775491 @default.
• W2020108695 cites W1994136266 @default.
• W2020108695 cites W2001795334 @default.
• W2020108695 cites W2004439667 @default.
• W2020108695 cites W2018586071 @default.
• W2020108695 cites W2031715540 @default.
• W2020108695 cites W2033133716 @default.
• W2020108695 cites W2035300434 @default.
• W2020108695 cites W2037848722 @default.
• W2020108695 cites W2046711141 @default.
• W2020108695 cites W2047849568 @default.
• W2020108695 cites W2050948257 @default.
• W2020108695 cites W2058272047 @default.
• W2020108695 cites W2066531939 @default.
• W2020108695 cites W2067411838 @default.
• W2020108695 cites W2068987786 @default.
• W2020108695 cites W2084523591 @default.
• W2020108695 cites W2088981729 @default.
• W2020108695 cites W2127357223 @default.
• W2020108695 cites W2171898868 @default.
• W2020108695 cites W2235679284 @default.
• W2020108695 doi "https://doi.org/10.1063/1.1587005" @default.
• W2020108695 hasPublicationYear "2003" @default.
• W2020108695 type Work @default.
• W2020108695 sameAs 2020108695 @default.
• W2020108695 citedByCount "11" @default.
• W2020108695 countsByYear W20201086952012 @default.
• W2020108695 countsByYear W20201086952014 @default.
• W2020108695 crossrefType "journal-article" @default.
• W2020108695 hasAuthorship W2020108695A5000609968 @default.
• W2020108695 hasAuthorship W2020108695A5036356118 @default.
• W2020108695 hasAuthorship W2020108695A5045141816 @default.
• W2020108695 hasAuthorship W2020108695A5060298088 @default.
• W2020108695 hasAuthorship W2020108695A5061659102 @default.
• W2020108695 hasAuthorship W2020108695A5070659547 @default.
• W2020108695 hasConcept C111337013 @default.
• W2020108695 hasConcept C113196181 @default.
• W2020108695 hasConcept C119599485 @default.
• W2020108695 hasConcept C120665830 @default.
• W2020108695 hasConcept C121332964 @default.
• W2020108695 hasConcept C127413603 @default.
• W2020108695 hasConcept C134112204 @default.
• W2020108695 hasConcept C145148216 @default.
• W2020108695 hasConcept C146088050 @default.
• W2020108695 hasConcept C153428861 @default.
• W2020108695 hasConcept C159985019 @default.
• W2020108695 hasConcept C171250308 @default.
• W2020108695 hasConcept C175854130 @default.
• W2020108695 hasConcept C178790620 @default.
• W2020108695 hasConcept C185544564 @default.
• W2020108695 hasConcept C185592680 @default.
• W2020108695 hasConcept C187069183 @default.
• W2020108695 hasConcept C192562407 @default.
• W2020108695 hasConcept C22078206 @default.
• W2020108695 hasConcept C2776921476 @default.
• W2020108695 hasConcept C2779227376 @default.
• W2020108695 hasConcept C40003534 @default.
• W2020108695 hasConcept C41823505 @default.
• W2020108695 hasConcept C43617362 @default.
• W2020108695 hasConcept C49040817 @default.
• W2020108695 hasConcept C544956773 @default.
• W2020108695 hasConcept C66825105 @default.
• W2020108695 hasConcept C69990965 @default.
• W2020108695 hasConcept C85443114 @default.
• W2020108695 hasConceptScore W2020108695C111337013 @default.
• W2020108695 hasConceptScore W2020108695C113196181 @default.
• W2020108695 hasConceptScore W2020108695C119599485 @default.
• W2020108695 hasConceptScore W2020108695C120665830 @default.
• W2020108695 hasConceptScore W2020108695C121332964 @default.
• W2020108695 hasConceptScore W2020108695C127413603 @default.
• W2020108695 hasConceptScore W2020108695C134112204 @default.
• W2020108695 hasConceptScore W2020108695C145148216 @default.
• W2020108695 hasConceptScore W2020108695C146088050 @default.
• W2020108695 hasConceptScore W2020108695C153428861 @default.
• W2020108695 hasConceptScore W2020108695C159985019 @default.
• W2020108695 hasConceptScore W2020108695C171250308 @default.
• W2020108695 hasConceptScore W2020108695C175854130 @default.
• W2020108695 hasConceptScore W2020108695C178790620 @default.
• W2020108695 hasConceptScore W2020108695C185544564 @default.
• W2020108695 hasConceptScore W2020108695C185592680 @default.

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